3BHE039724R0C3D PPD513AOC-100440 \ 集成柵極換向晶體管
型號(hào)：3BHE039724R0C3D PPD513AOC-100440
類別：集成柵極換向晶體管
質(zhì)保：365天
貨期：3-5天/周
產(chǎn)品凈厚度/長度：114.3 毫米
通信協(xié)議：PROFIBUS DP
傳輸速率：960 kbps、1.5 Mbps、3 Mbps
節(jié)點(diǎn)地址：0 至 255
電源電壓：24 VDC
功耗：< 5 W
3BHE039724R0C3D PPD513AOC-100440 集成柵極換向晶體管(IGCT)是一種先進(jìn)的電力半導(dǎo)體器件，以下是關(guān)于它的詳細(xì)介紹：
定義與結(jié)構(gòu)：
集成柵極換流晶閘管(Intergrated Gate Commutated Thyristors，簡稱IGCT)是1996年問世的新型電力半導(dǎo)體器件，專為巨型電力電子成套裝置設(shè)計(jì)。
它基于GTO(門極可關(guān)斷晶閘管)結(jié)構(gòu)，并采用了集成柵極結(jié)構(gòu)進(jìn)行柵極硬驅(qū)動(dòng)，同時(shí)結(jié)合了緩沖層技術(shù)及陽極透明發(fā)射極技術(shù)。
特點(diǎn)與優(yōu)勢：
IGCT結(jié)合了晶閘管的通態(tài)特性和晶體管的開關(guān)特性，擁有低通態(tài)壓降、高阻斷電壓和穩(wěn)定的開關(guān)特性。
由于采用了緩沖結(jié)構(gòu)和淺層發(fā)射極技術(shù)，IGCT的動(dòng)態(tài)損耗降低了約50%。
在一個(gè)芯片上集成了具有良好動(dòng)態(tài)響應(yīng)的續(xù)流二極管，實(shí)現(xiàn)了晶閘管與晶體管的性能有機(jī)結(jié)合。
應(yīng)用與影響：
3BHE039724R0C3D PPD513AOC-100440 IGCT使得變流裝置在功率、可靠性、開關(guān)速度、效率、成本、體積和重量等方面取得了顯著進(jìn)步，為電力電子成套裝置帶來了革新。
該器件具有電流大、電壓高、開關(guān)頻率高、可靠性高等特點(diǎn)，同時(shí)結(jié)構(gòu)緊湊、損耗低，且制造成本低、成品率高，顯示出良好的應(yīng)用前景。
Model: 3BHE039724R0C3D PPD513AOC-100440
Category: Integrated gate commutator transistor
Warranty: 365 days
Delivery time: 3-5 days/week
Net product thickness/length: 114.3 mm
Communication protocol: PROFIBUS DP
Transmission rate: 960 kbps, 1.5 Mbps, 3 Mbps
Node addresses: 0 to 255
Power supply voltage: 24 VDC
Power consumption: < 5 W
3BHE039724R0C3D PPD513AOC-100440 Integrated gate commutator transistor (IGCT) is an advanced power semiconductor device, the following is a detailed introduction about it:
Definition and structure:
Intergrated Gate Commutated Thyristors (IGCT) are a new type of power semiconductor device introduced in 1996, designed for large power electronics packages.
It is based on GTO (gate turn-off thyristor) structure, and adopts integrated gate structure to drive the gate hard, combined with buffer layer technology and anode transparent emitter technology.
Features and advantages:
The 3BHE039724R0C3D PPD513AOC-100440 IGCT combines the on-state characteristics of thyristors and the switching characteristics of transistors, with low on-state voltage drop, high blocking voltage and stable switching characteristics.
Because of the buffer structure and shallow emitter technology, the dynamic loss of IGCT is reduced by about 50%.
The continuous current diode with good dynamic response is integrated on a chip, and the performance of thyristor and transistor is organically combined.
Application and impact:
The 3BHE039724R0C3D PPD513AOC-100440 IGCT has made significant progress in terms of power, reliability, switching speed, efficiency, cost, volume and weight, and has brought innovation to power electronics packages.
The device has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low manufacturing cost, high yield, and shows a good application prospect.
