TMPU-1002
這是一種高純度的二氧化鈦（TiO2）材料，主要用于沉積薄膜，特別是在半導體制造、光學器件和磁性器件等領域有廣泛應用。該產(chǎn)品具有高純度、良好的均勻性和長使用壽命等特點。
磁控濺射靶材料在半導體制造中的應用主要包括以下幾個方面：
晶圓制造：靶材在晶圓制造環(huán)節(jié)主要用于晶圓導電層、阻擋層以及金屬柵極的制作。例如，鋁靶和銅靶常用于制作導電層，而鈦靶和鉭靶則常用于制作阻擋層。這些靶材的純度要求極高，通常在5N（99.999%）以上，以確保薄膜的質量和性能
芯片封裝：在芯片封裝環(huán)節(jié)，靶材用于生成凸點下金屬層、布線層等金屬材料。這些材料對于芯片的電性能和穩(wěn)定性至關重要，因此對靶材的純度和均勻性有嚴格的要求
導線工藝：在半導體芯片的制作中，靶材用于制作傳遞信息的金屬導線。這些導線通過特殊的加工工藝，將沉積在芯片表面的金屬薄膜刻蝕成納米級別的金屬線，連接芯片內部的微型晶體管，實現(xiàn)信號傳遞
高介電常數(shù)的介質金屬柵極技術：鈦材料作為高介電常數(shù)的介質金屬柵極技術的主要材料，這是在芯片制造中用于提高性能和降低功耗的關鍵技術
晶圓接合焊盤工藝：鋁材料在晶圓接合焊盤工藝中作為主要材料，這是在芯片封裝過程中重要的一步，用于確保芯片與外部電路的連接
TMPU-1002
This is a high-purity titanium dioxide (TiO2) material, mainly used for deposition thin films, especially in semiconductor manufacturing, optical devices and magnetic devices have a wide range of applications. The product has the characteristics of high purity, good uniformity and long service life.
The application of magnetron sputtering target materials in semiconductor manufacturing mainly includes the following aspects:
Wafer manufacturing: The target material is mainly used in the wafer manufacturing process for the production of conductive layer, barrier layer and metal gate. For example, aluminum and copper targets are often used to make conductive layers, while titanium and tantalum targets are often used to make barrier layers. The purity of these targets is extremely high, usually above 5N (99.999%), to ensure the quality and performance of the film
Chip packaging: In the chip packaging link, the target is used to generate metal layers under the convex points, wiring layers and other metal materials. These materials are critical to the electrical properties and stability of the chip, so there are strict requirements for the purity and uniformity of the target
Wire process: In the manufacture of semiconductor chips, the target material is used to make metal wires that transmit information. These wires, through a special processing process, etch the metal film deposited on the surface of the chip into nanoscale metal wires, which connect the micro transistors inside the chip to achieve signal transmission
Dielectric metal gate technology with high dielectric constant: Titanium material is the main material of dielectric metal gate technology with high dielectric constant, which is the key technology used to improve performance and reduce power consumption in chip manufacturing
Wafer bonding pad process: Aluminum is used as the main material in the wafer bonding pad process, which is an important step in the chip packaging process to ensure that the chip is connected to the external circuit
聯(lián)系： BeLin
電子郵件： 18005021035@163.com
電話：18005021035
包裝和運輸
1）有現(xiàn)貨的貨物，我們將在收到付款后3天內發(fā)出訂單。
2）我們可以通過DHL，UPS，F(xiàn)edex和EMS將貨物運送到世界各地。包裝很結實。如果您有任何特殊要求，請告訴我。
3） 您將在我們發(fā)送貨物后大約 7 天收到貨物。
您可能有任何問題
問： 你們的包裝條件是什么？
答： 一般來說，我們將貨物包裝在帶有泡沫襯墊的紙箱中，以防止貨物損壞。
問： 你們的付款條件是什么？
答： 裝運前 100% T/T。西聯(lián)匯款，信用卡也是可以接受的
問： 你們的交貨時間呢？
答： 一般在收到付款后 1-3 天。具體交貨時間取決于訂單的類型和數(shù)量。
其他型號推薦：
3BHL001374P0001
3BHB012873R0004
3BHB012871R0001
3BHB012870R0002
3BHB012870R0001
3BHB012871R0005
3BHB012871R0002
3BHB012864R0002
3BHB020945R0010
3BHB020945R0001
3BHB030833R0001
3BHB027204R0001
UFC760BE43 3BHE004573R0043
1SCA022697R2770
3BSE008538R1
500CPU05 1MRB150081R1/E
500CIM05 1MRB150077R1/B
500BIO01 1MRB150005R1/J
500SCM01 1MRB200059/C1MRB15004R0001
COM0034
PM865 3BSE030193R1
UFC760BE142 3BHE004573R0142
INSUMMCU2 MCU2A02V24
3BHB005243R0106
NTMPO1
NTCLO1
3BHB030310R0001
S-093H
3BHE051592R0101
SPDSI13
IEMMU21
216AB61 HESG324013R101
216VC62A HESG324442R13/B
